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Transistor
2SD2210
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
4.50.1 1.60.2
Unit: mm
1.50.1
2.60.1
0.4max.
s Features
q q q
Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. (Ta=25C)
Ratings 25 20 12 1 0.5
*
45
1.0-0.2
+0.1
0.40.08 0.50.08 1.50.1 3.00.15
4.0-0.20
0.40.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Unit V V V A A W C C
1:Base 2:Collector 3:Emitter
3
2
1
marking
1 150 -55 ~ +150
EIAJ:SC-62 Mini Power Type Package
Marking symbol : IK
Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse
(Ta=25C)
Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*3
*3R on
Conditions VCB = 25V, IE = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 1A*2 IC = 0.5A, IB = 20mA IC = 0.5A, IB = 50mA VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f= 1MHz
min
typ
max 1
Unit A V V V
25 20 12 200 60 0.13 0.4 1.2 200 10 1.0
*2
800
MHz pF Pulse measurement
*1h
FE1
Rank classification
Rank hFE1 R 200 ~ 350 IKR S 300 ~ 500 IKS T 400 ~ 800 IKT
Measurement circuit
1k
IB=1mA f=1kHz V=0.3V
VB
VV
VA
Marking Symbol
VB Ron= !1000() VA-VB
2.50.1
+0.25
V V
1
Transistor
PC -- Ta
1.4
2SD2210
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
1.2 IB=4.0mA 1.0 Ta=25C 3.5mA 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.5mA 0.2 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75C 25C -25C
VCE(sat) -- IC
IC/IB=25
Collector power dissipation PC (W)
1.2
Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion.
1.0
0.8
0.6
0.4
0.2
0 0 20 40 60 80 100 120 140 160
Collector current IC (A)
0 0 1 2 3 4 5 6
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100
hFE -- IC
IC/IB=10 1200 VCE=2V 400
fT -- I E
VCB=10V Ta=25C
Base to emitter saturation voltage VBE(sat) (V)
1000
Transition frequency fT (MHz)
0.3 1 3 10
30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C
Forward current transfer ratio hFE
350 300 250 200 150 100 50
800 Ta=75C 600 25C -25C 400
25C
200
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0 -1
-3
-10
-30
-100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob -- VCB
24
Ron -- IB
IE=0 Ta=25C f=1MHz 1000 300 Ron measuring circuit IB=1mA
Collector output capacitance Cob (pF)
20
ON resistance Ron ()
100 30 10 3 1 0.3
VB
V
VA
16
f=1kHz V=0.3V
12
8
4
0 1 3 10 30 100
0.1 0.01 0.03
0.1
0.3
1
3
10
Collector to base voltage VCB (V)
Base current IB (mA)
2
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2001 MAR

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